• Author / Uploaded
• Saikumar

Citation preview

TN0104 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package

BVDSS / BVDGS

RDS(ON) (max)

VGS(th) (max)

ID(ON) (min)

TO-92

TO-243AA*

Die†

40V

1.8Ω

1.6V

2.0A

TN0104N3

—

TN0104ND

40V

2.0Ω

1.6V

2.0A

—

TN0104N8

—

7

* Same as SOT-89. †

Product supplied on 2000 piece carrier tape reels. MIL visual screening available

Product marking for TO-243AA:

Features

TN1L*

Low threshold —1.6V max.

Where *=2-week alpha date code

High input impedance Low input capacitance Fast switching speeds

Low Threshold DMOS Technology

Low on resistance

These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices

Applications

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives

Package Options

Analog switches General purpose line drivers Telecom switches

D

Absolute Maximum Ratings

G

Drain-to-Source Voltage

BVDSS

Drain-to-Gate Voltage

BVDGS

TO-243AA (SOT-89)

± 20V

Gate-to-Source Voltage Operating and Storage Temperature

D S

SGD

TO-92

-55°C to +150°C

Soldering Temperature*

300°C Note: See Package Outline section for dimensions.

* For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds. 7-31

TN0104

Thermal Characteristics Package

ID (continuous)*

ID (pulsed)

Power Dissipation @ TC = 25°C

°C/W

°C/W

θja

IDR*

IDRM

0.80A

2.40A

1.0W

125

170

0.80A

2.40A

2.90A

1.6W†

15

78†

1.40A

2.90A

TO-92 TO-243AA

1.40A

θjc

* ID (continuous) is limited by max rated Tj. TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant P D increase possible on ceramic substrate.

Electrical Characteristics Symbol

(@ 25°C unless otherwise specified)

Parameter

Min

BVDSS

Drain-to-Source Breakdown Voltage

40

VGS(th)

Gate Threshold Voltage

0.6

∆VGS(th)

Change in VGS(th) with Temperature

IGSS

Gate Body Leakage

IDSS

Zero Gate Voltage Drain Current

ON-State Drain Current

ID(ON)

RDS(ON)

Static Drain-to-Source ON-State Resistance

Typ

Max

VGS= 0V, ID = 1.0mA

1.6

V

VGS = VDS, ID = 500µA

-3.8

-5.0

mV/°C

VGS = VDS, ID = 1.0mA

0.1

100

nA

VGS = ±20V, VDS = 0V

1

µA

VGS =0V, VDS = Max Rating

100

µA

VGS = 0V, VDS = 0.8 Max Rating TA = 125°C

0.35

VGS = 3V, VDS = 20V

1.1

2.0

2.6

VGS = 10V, VDS = 20V

5.0

VGS = 3V, ID = 50mA

A

2.3

2.5

TO-92

1.5

1.8

Change in RDS(ON) with Temperature

VGS = 5V, VDS = 20V

0.5

All Packages

∆RDS(ON)

Conditions

V

TO-243AA

VGS = 5V, ID = 250mA Ω

0.7 0.34

1.0

GFS

Forward Transconductance Input Capacitance

70

COSS

Common Source Output Capacitance

50

CRSS

Reverse Transfer Capacitance

15

td(ON)

Turn-ON Delay Time

3.0

5.0

tr

Rise Time

7.0

8.0

td(OFF)

Turn-OFF Delay Time

6.0

9.0

tf

Fall Time

5.0

8.0

VSD

Diode Forward

TO-92

1.2

1.8

Voltage Drop

TO-243AA

%/°C

VGS =10V, ID = 1A, VDS = 20V, ID = 0.5A

pF

VGS = 0V, VDS = 20V f = 1 MHz

ns

VDD = 20V, ID = 1A RGEN = 25Ω

0.45

VGS = 0V, ISD = 1.0A

2.0

Reverse Recovery Time

VGS = 10V, ID = 1A VGS = 10V, ID = 1A

2.0

CISS

trr

Unit

Ω

†

300

V

VGS = 0V, ISD = 0.5A

ns

VGS = 0V, ISD = 1A

Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. VDD

Switching Waveforms and Test Circuit RL

10V 90%

PULSE GENERATOR

INPUT 0V

10% t(ON) td(ON)

t(OFF) tr

td(OFF)

OUTPUT

Rgen

tF D.U.T.

VDD

10%

INPUT

10%

OUTPUT 0V

90%

90%

7-32

TN0104

Typical Performance Curves Output Characteristics

Saturation Characteristics

3.75

3.75

3.0

VGS = 10V

2.25

ID (amperes)

ID (amperes)

3.0

8V 1.5

6V

0.75

4V

VGS = 10V

2.25

8V 1.5

6V

0.75

4V

2V

2V

0

0 0

10

20

30

40

0

50

2

4

VDS (volts)

TA = -55 ° C

4

0.60

TA = 25° C

0.45

PD (watts)

GFS (siemens)

10

5

VDS = 25V -25V

TA = 125 ° C 0.30

3

TO-243AA (T A = 25°C)

2

TO-92

1

0.15

0

0 0

0.5

1.0

1.5

2.0

0

2.5

25

50

75

125

100

150

TC (° C)

ID (amperes)

Thermal Response Characteristics

Maximum Rated Safe Operating Area 10

Thermal Resistance (normalized)

1.0

TO-39 (DC)

ID (amperes)

8

Power Dissipation vs. Case Temperature

Transconductance vs. Drain Current 0.75

1.0

6

VDS (volts)

TO-92 (DC) TO-243AA (DC) (T A = 25°C)

0.1

0.01 0.1

1

10

0.8

0.6

0.4

VDS (volts)

TO-92 P D = 1W T C = 25°C

0.2

0 0.001

100

TO-243AA TA = 25°C PD = 1.6W

0.01

0.1

tp (seconds)

7-33

1

10

7

TN0104

Typical Performance Curves BVDSS Variation with Temperature

On-Resistance vs. Drain Current 10

1.3

V GS = 5V 8

RDS(ON) (ohms)

1.1

1.0

6

VGS = 10V

4

2

0.9

0

0.8 -50

0

50

100

1

0

150

Tj (° C) Transfer Characteristics 3.0

V(th) and RDS Variation with Temperature

TA = -55 ° C

1.4

1.4

1.2

1.2

25 ° C

VDS = 25V

1.8

VGS(th) (normalized)

2.4

ID (amperes)

2

ID (amperes)

125° C

1.2

1.0

RDS(ON) @ 5V, 0.25A

0.8

0.8

V(th) @ 0.5mA

0.6

0.6

0

0.6

0.4 0

2

4

6

8

0.4 -50

10

1.0

0

50

100

150

Tj (° C)

VGS (volts) Capacitance vs. Drain-to-Source Voltage

Gate Drive Dynamic Characteristics 10

100

VDS = 10V

f = 1MHz 8

55pF

VGS (volts)

C (picofarads)

75

CISS 50

40V 6

4

COSS

25

2

CRSS

50pF

0

0 0

10

20

30

0.5

40

0.65

0.8

0.95

QG (nanocoulombs)

VDS (volts)

7-34

1.1

1.25

RDS(ON) (normalized)

BVDSS (normalized)

1.2